CVD Deposition Furnaces · DVR-16

CVD Chemical Vapor Deposition Tube Furnace

CVD Chemical Vapor Deposition Tube Furnace is a HuanYu cvd deposition furnaces system for thin-film deposition, nanowire growth, two-dimensional materials, substrate treatment. Published configuration references include 1600 / 1500 °C configurations and Vacuum / controlled atmosphere. Final selection depends on the material, workload, process window and selected configuration.

Direct definition

CVD Chemical Vapor Deposition Tube Furnace is specified around a defined material process.

CVD Chemical Vapor Deposition Tube Furnace is a cvd deposition furnaces system for thin-film deposition, nanowire growth, two-dimensional materials, substrate treatment. The published record should be reviewed against the required material, temperature, atmosphere, pressure, workload and acceptance criteria.

Published model

DVR-16 is documented with temperature range: 1600 / 1500 °C configurations; atmosphere / pressure: Vacuum / controlled atmosphere.

Technical overview

Designed around the complete thermal process.

CVD Chemical Vapor Deposition Tube Furnace is a HuanYu cvd deposition furnaces system for thin-film deposition, nanowire growth, two-dimensional materials, substrate treatment. Published configuration references include 1600 / 1500 °C configurations and Vacuum / controlled atmosphere. Final selection depends on the material, workload, process window and selected configuration.

01

thin-film deposition

02

nanowire growth

03

two-dimensional materials

04

substrate treatment

Key technical facts

  • Temperature reference: 1600 / 1500 °C configurations
  • Environment reference: Vacuum / controlled atmosphere
  • 1. Equipment overview This equipment is a laboratory-specific chemical vapor deposition tube furnace. It relies on a high-temperature vacuum environment to introduce multi-channel process gases, undergo gas-phase chemical reactions, and grow various films, nanowires, and two-dimensional materials on the surface of the substrate. It is suitable for research and development of new materials in universities and research institutes. The whole machine integrates high-temperature heating, high vacuum unit, high-precision MFC gas mixing, and PLC automatic control system. It supports a variety of deposition processes such as vacuum, partial pressure, and constant and negative pressure. The operation is stable and the data can be traced throughout the whole process. 2. The core technical parameters of the temperature system are as high as 1600 ℃, and the long-term stable use is ≤ 1500 ℃; the silicon and molybdenum rods are radiated on both sides; the temperature of the B-type double platinum-rhodium thermocouple is measured with a temperature control accuracy of ± 1 ℃; the heating zone length is 350mm, and the constant temperature zone is ≥ 150mm; the heating rate is ≤ 10 ℃/min, the whole machine power is 7kW, and the single-phase 220–240V power supply is provided; the 30-segment PID programmable heating and cooling curve is supported. The double-layer air-cooled modular furnace shell of the furnace body and furnace tube, the temperature of the shell is lower than 45 °C; the high-purity alumina fiber assembled furnace, the inner wall is coated with high-temperature coating, and the steps are sealed and fireproof; the 99 high-purity corundum furnace tube, the specification is Φ80 × 1000mm, and the 304 stainless steel KF quick-disassembly flange at both ends, and the disassembly and assembly of the sample does not require cumbersome fastening screws. Vacuum pressure system comes standard with mechanical pump, cold limit vacuum ≤ 5Pa; with SMC
  • Digital display pressure gauge and proportional ball valve closed-loop constant pressure control; explosion-proof pressure is 25KPa (adjustable up and down), the ultimate pressure bearing in the furnace is ≤ 20KPa, and the pressure exceeds the standard for automatic pressure relief to ensure combustible hydrogen working conditions. Precision gas path system dual-channel high-precision mass flowmeter, hydrogen and argon range are 0-100SCCM, flow control accuracy is better than 1.5%; equipped with a mixing buffer tank, can be individually ventilated, mixed proportion of gas supply, suitable for all kinds of precursor gas phase reaction needs. 3. The structure of the whole machine is composed of high-temperature heating units. The silicon and molybdenum rods are surrounded by radiation on both sides for heating. The heat storage of the fiber furnace is small, and the heating and cooling are fast. The long constant temperature zone ensures that the thickness of the whole substrate film is uniform. The vacuum unit DVR-16 mechanical pump + high vacuum baffle valve + bellows + resistance vacuum gauge has a fast pumping speed, stable vacuum in the cavity, and can be replaced multiple times to reduce oxygen content. Precision gas mixing pipeline MFC mass flow controller + stainless steel gas circuit, accurate gas ratio, uniform and centralized exhaust, suitable for CVD film, nano material growth. Automatic intelligent electronic control PLC + 10-inch touch screen man-machine interface, manual/automatic dual mode; comes with paperless recorder, real-time collection, storage temperature, vacuum, pressure, gas flow curve; supports WiFi/network cable connection mobile phone app remote viewing, set process parameters. Full link interlock
  • Integrated over-temperature, broken coupling, over-current, leakage, insufficient water pressure, over-pressure, vacuum pump failure sound and light alarm, abnormal automatic cut-off heating, hydrogen working conditions exclusive pressure interlock, to eliminate the risk of air backflush explosion. Fourth, the core product advantage is that the length is uniform, the constant temperature zone is sufficient, the temperature is consistent throughout the substrate, the film thickness is uniform, and the experimental repeatability is high. High-precision gas ratio MFC digital precise flow control, stable mixing gas ratio, meet the stringent preparation conditions of graphene, boron nitride, semiconductor film. The closed-loop proportional valve for controllable negative pressure deposition environment automatically adjusts the vacuum degree in the furnace, which can stabilize and maintain the partial pressure required by the process and adapt to different boiling precursors. Convenient KF quick-disassembly flange design for easy disassembly and assembly, saving time and labor by replacing samples and cleaning furnace tubes. The entire data archive automatically generates process reports and curves, supports export, and is convenient for archiving papers and experimental records. Complete explosion-proof design with multiple pressure and temperature interlock protection, and high experimental coefficients for hydrogen reduction and vapor deposition. 5. Applicable processes and materials: two-dimensional materials: graphene, hexagonal boron nitride, oxide film vapor phase growth; nanomaterials: nanowires, carbon nanotubes, metal nanopowder synthesis; electron optics: semiconductor film, metal coating, ceramic coating deposition; supporting processes: powder atmosphere annealing, precursor reduction, CVD vapor phase doping modification. 6. Supporting and after-sales service
  • The factory comes standard with corundum pipes, high-temperature gloves, hooks, sealing rings, full sets of pipes, and operating instructions; the whole machine is guaranteed for 12 months, and wearing parts such as molybdenum silicon rods, thermocouples, and seals are not covered by the warranty; the failure response is 2 hours, and the engineer is on-site for 24 hours for major failures; the control system software is upgraded free of charge for life, and free on-site installation and hands-on training. 7. The installation site requires a three-phase adaptive power supply, and ≥ 600mm maintenance space is reserved around the equipment; the ambient temperature is -10 ~ 75 ℃, the humidity is ≤ 85%, and the site is free of flammable, explosive, and strongly corrosive dust gases.

Technical parameters

Published configuration data.

Temperature range1600 / 1500 °C configurations
Atmosphere / pressureVacuum / controlled atmosphere

Product details

Technical description from the published product record

1. Equipment overview This equipment is a laboratory-specific chemical vapor deposition tube furnace. It relies on a high-temperature vacuum environment to introduce multi-channel process gases, undergo gas-phase chemical reactions, and grow various films, nanowires, and two-dimensional materials on the surface of the substrate. It is suitable for research and development of new materials in universities and research institutes. The whole machine integrates high-temperature heating, high vacuum unit, high-precision MFC gas mixing, and PLC automatic control system. It supports a variety of deposition processes such as vacuum, partial pressure, and constant and negative pressure. The operation is stable and the data can be traced throughout the whole process. 2. The core technical parameters of the temperature system are as high as 1600 ℃, and the long-term stable use is ≤ 1500 ℃; the silicon and molybdenum rods are radiated on both sides; the temperature of the B-type double platinum-rhodium thermocouple is measured with a temperature control accuracy of ± 1 ℃; the heating zone length is 350mm, and the constant temperature zone is ≥ 150mm; the heating rate is ≤ 10 ℃/min, the whole machine power is 7kW, and the single-phase 220–240V power supply is provided; the 30-segment PID programmable heating and cooling curve is supported. The double-layer air-cooled modular furnace shell of the furnace body and furnace tube, the temperature of the shell is lower than 45 °C; the high-purity alumina fiber assembled furnace, the inner wall is coated with high-temperature coating, and the steps are sealed and fireproof; the 99 high-purity corundum furnace tube, the specification is Φ80 × 1000mm, and the 304 stainless steel KF quick-disassembly flange at both ends, and the disassembly and assembly of the sample does not require cumbersome fastening screws. Vacuum pressure system comes standard with mechanical pump, cold limit vacuum ≤ 5Pa; with SMC

Digital display pressure gauge and proportional ball valve closed-loop constant pressure control; explosion-proof pressure is 25KPa (adjustable up and down), the ultimate pressure bearing in the furnace is ≤ 20KPa, and the pressure exceeds the standard for automatic pressure relief to ensure combustible hydrogen working conditions. Precision gas path system dual-channel high-precision mass flowmeter, hydrogen and argon range are 0-100SCCM, flow control accuracy is better than 1.5%; equipped with a mixing buffer tank, can be individually ventilated, mixed proportion of gas supply, suitable for all kinds of precursor gas phase reaction needs. 3. The structure of the whole machine is composed of high-temperature heating units. The silicon and molybdenum rods are surrounded by radiation on both sides for heating. The heat storage of the fiber furnace is small, and the heating and cooling are fast. The long constant temperature zone ensures that the thickness of the whole substrate film is uniform. The vacuum unit DVR-16 mechanical pump + high vacuum baffle valve + bellows + resistance vacuum gauge has a fast pumping speed, stable vacuum in the cavity, and can be replaced multiple times to reduce oxygen content. Precision gas mixing pipeline MFC mass flow controller + stainless steel gas circuit, accurate gas ratio, uniform and centralized exhaust, suitable for CVD film, nano material growth. Automatic intelligent electronic control PLC + 10-inch touch screen man-machine interface, manual/automatic dual mode; comes with paperless recorder, real-time collection, storage temperature, vacuum, pressure, gas flow curve; supports WiFi/network cable connection mobile phone app remote viewing, set process parameters. Full link interlock

Integrated over-temperature, broken coupling, over-current, leakage, insufficient water pressure, over-pressure, vacuum pump failure sound and light alarm, abnormal automatic cut-off heating, hydrogen working conditions exclusive pressure interlock, to eliminate the risk of air backflush explosion. Fourth, the core product advantage is that the length is uniform, the constant temperature zone is sufficient, the temperature is consistent throughout the substrate, the film thickness is uniform, and the experimental repeatability is high. High-precision gas ratio MFC digital precise flow control, stable mixing gas ratio, meet the stringent preparation conditions of graphene, boron nitride, semiconductor film. The closed-loop proportional valve for controllable negative pressure deposition environment automatically adjusts the vacuum degree in the furnace, which can stabilize and maintain the partial pressure required by the process and adapt to different boiling precursors. Convenient KF quick-disassembly flange design for easy disassembly and assembly, saving time and labor by replacing samples and cleaning furnace tubes. The entire data archive automatically generates process reports and curves, supports export, and is convenient for archiving papers and experimental records. Complete explosion-proof design with multiple pressure and temperature interlock protection, and high experimental coefficients for hydrogen reduction and vapor deposition. 5. Applicable processes and materials: two-dimensional materials: graphene, hexagonal boron nitride, oxide film vapor phase growth; nanomaterials: nanowires, carbon nanotubes, metal nanopowder synthesis; electron optics: semiconductor film, metal coating, ceramic coating deposition; supporting processes: powder atmosphere annealing, precursor reduction, CVD vapor phase doping modification. 6. Supporting and after-sales service

The factory comes standard with corundum pipes, high-temperature gloves, hooks, sealing rings, full sets of pipes, and operating instructions; the whole machine is guaranteed for 12 months, and wearing parts such as molybdenum silicon rods, thermocouples, and seals are not covered by the warranty; the failure response is 2 hours, and the engineer is on-site for 24 hours for major failures; the control system software is upgraded free of charge for life, and free on-site installation and hands-on training. 7. The installation site requires a three-phase adaptive power supply, and ≥ 600mm maintenance space is reserved around the equipment; the ambient temperature is -10 ~ 75 ℃, the humidity is ≤ 85%, and the site is free of flammable, explosive, and strongly corrosive dust gases.

Standard configuration

Included scope.

  • Confirm the included scope for the selected configuration.

Optional configuration

Available options.

  • Review tooling, controls, cooling and gas options with HuanYu.

Technical reading

Related guides and articles.

Use these pages to clarify the process window before requesting a configuration.

Vacuum Furnace Guide: Types, Uses and Selection Questions

Product FAQ

Questions to answer before requesting a configuration.

What is the CVD Chemical Vapor Deposition Tube Furnace used for?

CVD Chemical Vapor Deposition Tube Furnace is presented for thin-film deposition, nanowire growth, two-dimensional materials, substrate treatment. Final process fit depends on the material, workload and operating environment.

What information should I provide for a technical recommendation?

Provide the material, part or sample dimensions, target temperature, atmosphere or vacuum level, batch size, process time, cooling preference and tooling requirements.

Can the equipment configuration be customized?

HuanYu can review chamber size, heating system, atmosphere, vacuum train, controls, cooling, tooling and safety interlocks before preparing a technical proposal.

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